vishay siliconix SI3451DV document number: 73701 s-71597-rev. b, 30-jul-07 www.vishay.com 1 new product p-channel 20-v (d-s) mosfet features ? trenchfet ? power mosfet ? pwm optimized ? 100 % r g tested product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) - 20 0.115 at v gs = - 4.5 v - 2.8 3.2 nc 0.205 at v gs = - 2.5 v - 2.1 t s op-6 top view 6 4 1 2 3 5 orderin g information: s i 3 451dv-t1-e 3 (le a d (p b )-free) 3 mm 2. 8 5 mm (3) g (1, 2, 5, 6) d p-channel mosfet marking code ad xxx lot traceability and date code part # code (4) s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. maximum under steady state conditions is 120 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 2.8 a t c = 70 c - 2.3 t a = 25 c - 2.6 b, c t a = 70 c - 2.1 b, c pulsed drain current i dm - 10 continuous source-drain diode current t c = 25 c i s - 1.76 t a = 25 c - 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 sec r thja 75 100 c/w maximum junction-to-foot (drain) steady state r thjf 70 85 rohs compliant
www.vishay.com 2 document number: 73701 s-71597-rev. b, 30-jul-07 vishay siliconix SI3451DV new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 16.7 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 - 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.6 a 0.092 0.115 v gs = - 2.5 v, i d = - 1.9 a 0.164 0.205 forward transconductance a g fs v ds = - 10 v, i d = - 2.6 a 5.5 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 250 pf output capacitance c oss 80 reverse transfer capacitance c rss 55 total gate charge q g v ds = - 10 v, v gs = - 5.0 v, i d = - 2.6 a 3.4 5.1 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 2.6 a 3.2 5 gate-source charge q gs 0.5 gate-drain charge q gd 1.4 gate resistance r g f = 1 mhz 8.5 13 turn-on delay time t d(on) v dd = - 10 v, r l = 4.76 i d ? - 2.1 a, v gen = - 4.5 v, r g = 1 914 ns rise time t r 30 45 turn-off delay time t d(off) 32 48 fall time t f 16 24 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.7 a pulse diode forward current a i sm - 10 body diode voltage v sd i s = - 2.1 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/s, t j = 25 c 17 26 ns body diode reverse recovery charge q rr 56nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 3
document number: 73701 s-71597-rev. b, 30-jul-07 www.vishay.com 3 vishay siliconix SI3451DV new product typical characteristics 25 c, unless noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 2 4 6 8 10 01234 v gs = 5 thru 3 v v gs = 1.5 v v ds - drain-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d v gs = 2 v v gs = 2.5 v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246810 i d - drain current (a) r ) n o ( s d ( e c n a t s i s e r - n o - ) v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 01234 i d = 2.8 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g v gs = 10 v v gs = 16 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-source voltage (v) ) a ( t n e r r u c n i a r d - i d t c = 125 c t c = - 55 c t c = 25 c c rss 0 100 200 300 400 500 0 4 8 12 16 20 c oss c iss v ds - drain-to-source voltage (v) ) f p ( e c n a t i c a p a c - c 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - junction temperature (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 4.5 v, i d = 2.6 a v gs = 2.5 v, i d = 1.9 a
www.vishay.com 4 document number: 73701 s-71597-rev. b, 30-jul-07 vishay siliconix SI3451DV new product typical characteristics 25 c, unless noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.00 0.2 0.4 0.6 0.8 v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 1 10 0.1 t a = 150 c t a = 25 c 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 t j - temperature (c) v ) h t ( s g ) v ( i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0.04 0.12 0.20 0.28 0.36 12345 i d = 2.6 a v gs - gate-to-source voltage (v) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d - ) t a = 125 c t a = 25 c 0 8 2 4 ) w ( r e w o p time (sec) 1600 10 6 0.1 0.01 100 t a = 25 c single pulse safe operating area 100 1 0.1 1 10 100 0.001 10 t a = 25 c single pulse ) a ( t n e r r u c n i a r d - i d 0.1 *r ds(on) limited v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 0.01 10 ms 100 ms dc 1 s 10 s
document number: 73701 s-71597-rev. b, 30-jul-07 www.vishay.com 5 vishay siliconix SI3451DV new product typical characteristics 25 c, unless noted *the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistan ce, and is more useful in settling the upper dis- sipation limit for cases where additional heat sinking is used. it is used to determine the current rating, when this rating fal ls below the package limit. current derating* 0 1 2 3 4 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperature (c) power, junction-to-foot 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 t c - case temperature (c) r e w o p
www.vishay.com 6 document number: 73701 s-71597-rev. b, 30-jul-07 vishay siliconix SI3451DV new product typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73701 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 duty cycle = 0.5 square wave pulse duration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. duty cycle, d = 2. per unit base = r thja = 120 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm single pulse normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 duty cycle = 0.5 square wave pulse duration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
